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Beilstein J. Nanotechnol. 2016, 7, 1743–1748, doi:10.3762/bjnano.7.167
Figure 1: Incidence of the probe beam on the sample and the laboratory (x',y',z') and the sample (x,y,z) coor...
Figure 2: Porosity of SiO2 films vs angle of deposition (filled squares). Also shown are corrected data from [16]...
Figure 3: The anisotropic refractive index (nonfilled symbols) of porous SiO2 at λ = 532 nm vs angle of depos...
Figure 4: SiO2 column tilt vs the SiO2 deposition angle. The experimental data from [15] and the curves simulated...
Figure 5: LC pretilt vs the SiO2 deposition angle. The experimental data from [2] and [3] are shown for comparison.
Beilstein J. Nanotechnol. 2016, 7, 825–833, doi:10.3762/bjnano.7.74
Figure 1: SWCNT-doped negative LC reorientation hypothesis: the LC remains homogeneously aligned while SWCNTs...
Figure 2: Linear polarized light direction for Raman measures at V = 0.
Figure 3: Raman spectra of a SWCNT-doped LC cell (λ = 523 nm). The G and G’-bands are related to SWCNTs. The ...
Figure 4: Raman spectrum at different driving voltages (0 V, 1.5 V, 2.5 V, 3.5 V and 4.5 V). The microscope i...
Figure 5: Raman G-band amplitude variation (below) during a driving voltage sequence between 0 and 11Vrms (ab...
Figure 6: Cell images under microscopic study during a complete off–on–off voltage cycle. Sample surface (a) ...
Figure 7: Impedance magnitude and phase measurements of (a) undoped and (b) SWCNT-doped LC cells.
Figure 8: Impedance magnitude and phase variation at different frequencies as a function of applied driving v...
Figure 9: Raman Intensity evolution of the G’-band and LC peaks with voltage. The SWCNT threshold voltage is ...